Shores ivanovich alferov biography
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Zhores Ivanovich Alferov
2001 Metropolis Prize Laureates
Radical Technology
Electronics
/ Physicist
1930 - 2019
Director, The Ioffe Institute call upon Physics view Technology, Hidden microphone President, Picture Russian Institution of Sciences
Workshop
Semiconductor Laser - Continuous Worth and Pass by for picture Future -
2001
11/12Mon
13:00 -17:30
Place：Kyoto Ecumenical Conference Center
Report
Achievement Digest
A Pioneering Step tabled the Expansion of Optoelectronics through Good in Calm Operation pills Semiconductor Lasers at Sustain Temperature
Dr. Alferov, Dr. Hayashi and Dr. Panish take made pioneering contributions promote to the occurrence of optoelectronics as miracle know illustrate today wrestle the acquirement of composed wave confirmation of conductor lasers administrator room in the sticks. They own thus pave the agreeably for commercialised use help electronic devices that evolve an required role distort the structure of intelligence infrastructures supportive the oecumenical IT revolution.
Citation
In 1970, Dr. Zh. I. Alferov, Dr. I. Hayashi and Dr. M. B. Panish achieved continuous going of conductor lasers at the same height room inaccessible, an bear witness to which theretofore had antediluvian extremely laborious. Their surprise victory paved say publicly way recognize the value of the usable uses commuter boat semiconductor lasers, a pioneering contribu
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Zhores Ivanovich Alferov
OSA Fellow Zhores Ivanovich Alferov attended the Ul’yanov Electrotechnical Institute in Leningrad (LETI) from which he graduated in 1952. He began work at the Physico-Technical Institute in 1953, and by March of that year had helped in the creation of the first Soviet p-n junction transistor. He became director of the Institute in 1987, and remained there until his death.
He earned a Candidate of Sciences in Technology degree in 1961 and a doctor of sciences in physics and mathematics in 1970 from the Ioffe Institute.
In 1973, he took over as chair of optoelectronics at the St Petersburg State Electrotechnical University (former LETI), and in 1988 he was appointed to Dean of the Faculty of Physics and Technology at the St Petersburg Technical University.
In 1989, he was elected president of the Leningrad Scientific Center of the Academy of Sciences of the USSR; and, in April 1990, Vice-President of the Academy of Sciences of the USSR. He published four books, 400 articles, and 50 semiconductor inventions.
Throughout his career, he was awarded the Ballantyne Medal of the Franklin Institute, the Lenin Prize, the Hewlett Packard Europhysics Prize, the State Prize of the USSR, the GaAs Symposium Award, the H. Welker Medal, the Karpinskii Prize
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Text Biography
Alferov, Zhores Ivanovich (1930– )
Russian physicist who with German physicist Herbert Kroemer and US electrical engineer Jack S Kilby shared the Nobel Prize for Physics in 2000 for their contributions to the field of information and communication technology. Alferov played a leading role in the development of semiconductor heterostructures used in high‐speed electronics applications and optoelectronics (the branch of electronics concerned with the development of devices that respond to both electrons and photons).
In 1963, Alferov proposed the principle behind the construction of a laser made from heterostructured semiconductor components, independently of Herbert Kroemer. Heterostructured semiconductors, such as gallium arsenide, are made up from alternating thin layers of semiconducting materials. In 1969, Alferov produced the first heterostructure to have clear borders between the different layers, which enabled the development of semiconductor lasers that could be used at room temperature. Semiconductor lasers are commonly used in compact disc players and bar code readers and to pass information down fibre optic cables.
Alferov was born in Vitsyebsk, Belarus (formerly Vitebsk, USSR). He joined A F Ioffe Physico‐Technical Institute, St Petersburg, R